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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 mΩ@VGS = 1.8V ...
Guangdong, china
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Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for ...
Verified
Encapsulated Sanitary Electric Actuated Ball Valve With 3 Piece , Field Serviceable This series is a pneumatic type sanitary 3-pc ball valve with tri-clamp / tri-clamp ends and ...
Jiangsu, china
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11kv 630 kva three-phase sm9 encapsulated transformer Transformer price/ S9 series transformer price transformer price/ S9 series transformer price Overview: 6-10KV stage S9, S9-M ...
Shandong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V ...
Guangdong, china
Member
TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ...
Guangdong, china
Member
TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage ...
Guangdong, china
Member
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL ...
Guangdong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 mΩ@VGS = 1.8V ...
Guangdong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V ...
Guangdong, china
Verified
TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ...
Guangdong, china
Verified
TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage ...
Guangdong, china
Verified
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
Guangdong, china
Member
BAW56/BAV70/BAV9 SWITCHING DIODE SOD-123 Plastic-Encapsulate Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications SWITCHING DIODESOD Marking MAXIMUM ...
Guangdong, china
Member
SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V Maximum ratings (Ta=25℃ unless ...
Guangdong, china
Member
SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC ...
Guangdong, china
Member
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
Guangdong, china
Verified
BAW56/BAV70/BAV9 SWITCHING DIODE SOD-123 Plastic-Encapsulate Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications SWITCHING DIODESOD Marking MAXIMUM ...
Guangdong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V Maximum ratings (Ta=25℃ unless ...
Guangdong, china
Verified
SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC ...
Guangdong, china
Verified
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