Active Member
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[China]
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Contact name:David Lee
Shenzhen Hua Xuan Yang Electronics Co.,Ltd |
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET
General Description
VDSS= V ID= 6.0 A z 20 | G1 6 | D1,D2 5 | G2 4 | |||||
| z | RDS(on) < Ω@V = 4.5V 25m GS | |||||||
| z | RDS(on) < Ω@V = 2.5V 32m GS | 1 2 3 S1 D1,D2 S2 | ||||||
FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
| Parameter Symbol Test Condition Min Typ Max Unit |
| STATIC CHARACTERICTISCS |
| Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V |
| Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA |
| Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA |
| Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V |
| Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S |
| Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V |
| DYNAMIC CHARACTERICTISCS (note4) |
| Input Capacitance Ciss 800 pF |
| Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF |
| Reverse Transfer Capacitance Crss 125 pF |
| SWITCHING CHARACTERICTISCS (note 4) |
| Turn-on delay time td(on) 18 ns |
| Turn-on rise time tr VDD=10V,VGS=4V, 5 ns |
| Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns |
| Turn-off fall time tf 20 ns |
| Total Gate Charge Qg 11 nC |
| Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC |
| Gate-Drain Charge Qgd 2.5 nC |
Notes :
1. Repetitive rating:Pluse width limited by maximum junction temperature
2. Surface Mounted on FR4 board,t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
SOT-23-6L Package Outline Dimensions
