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HXY2302Z Mos Field Effect Transistor N Channel 20-V(D-S) MOSFET

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SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET

Product Summary

RDS(on)<60mΩ@VGS=4.5V

RDS(on)<73mΩ@VGS=2.5V

ID=2.3A

VDSS=20V

Maximum ratings (Ta=25℃ unless otherwise noted)

T =25 a ℃ unless otherwise specified

Typical Characteristic

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11...

60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) ...

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) ...

SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < ...

SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ...

60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z ...

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