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TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

Country/Region china
City & Province shenzhen guangdong
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Product Details

TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN)

 

 

 

FEATURE
 
  • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use

 

AXIMUM RATINGS (Ta=25 unless otherwise noted)
 
SymbolParameterValueUnit
VCBOCollector-Base Voltage60V
VCEOCollector-Emitter Voltage60V
VEBOEmitter-Base Voltage5V
ICCollector Current -Continuous2A
PCCollector Power Dissipation2W
TJJunction Temperature150
TstgStorage Temperature-55 to +150

 

 

 

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=10mA,IE=060  V
Collector-emitter sustaining voltageVCEO(sus)IC=30mA,IB=060  V
Emitter-base breakdown voltageV(BR)EBOIE=10mA,IC=05  V
Collector cut-off currentICEOVCE=30V,IB=0  2mA
Collector cut-off currentICBOVCB=60V,IE=0  1mA
Emitter cut-off currentIEBOVEB=5V,IC=0  2mA

 

DC current gain

hFE(1)VCE=4V,IC=1A1000   
hFE(2)VCE=4V,IC=2A500   
Collector-emitter saturation voltageVCE(sat)IC=2A,IB=8mA  2.5V
Base-emitter voltageVBEVCE=4V,IC=2A  2.8V
Collector output capacitanceCobVCB=10V,IE=0,f=0.1MHz  100pF

 

 

 

 

TO-220-3L Package Outline Dimensions

 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A4.4704.6700.1760.184
A12.5202.8200.0990.111
b0.7100.9100.0280.036
b11.1701.3700.0460.054
c0.3100.5300.0120.021
c11.1701.3700.0460.054
D10.01010.3100.3940.406
E8.5008.9000.3350.350
E112.06012.4600.4750.491
e2.540 TYP0.100 TYP
e14.9805.1800.1960.204
F2.5902.8900.1020.114
h0.0000.3000.0000.012
L13.40013.8000.5280.543
L13.5603.9600.1400.156
Φ3.7353.9350.1470.155

 

 

TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)

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