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HXY2300 Mosfet Power Transistor , Field Effect Transistor Fast Switching

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Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

SOT-23 Plastic-Encapsulate MOSFETS HXY2300

Product Summary

VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 mΩ@VGS = 1.8V

APPLICATION

z DC/DC Converters z Load Switching for Portable Applications

FEATURE

z TrenchFET Power MOSFET

Electrical Characteristics (T =25°C unless otherwise noted)

T =25 a ℃ unless otherwise specified

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