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HXY3400 N Type Transistor Load Switching For Portable Applications

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Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

SOT-23 Plastic-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor

Product Summary

ID= 6.0 A VDSS=20v

RDS(on) <32 mΩ VGS =4.5V

RDS(on) <40 mΩ VGS =2.5V

FEATURE

TrenchFET Power MOSFET

APPLICATION

DC/DC Converters

Load Switching for Portable Applications

Maximum ratings (Ta=25℃ unless otherwise noted)

T =25 a ℃ unless otherwise specified

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