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HXY2302Z Mos Field Effect Transistor N Channel 20-V(D-S) MOSFET

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SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET

Product Summary

RDS(on)<60mΩ@VGS=4.5V

RDS(on)<73mΩ@VGS=2.5V

ID=2.3A

VDSS=20V

Maximum ratings (Ta=25℃ unless otherwise noted)

T =25 a ℃ unless otherwise specified

Typical Characteristic

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