Results for5x10 5mm2 gan epitaxial waferfrom 369 Products.
|
|
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
|
|
|
|
|
High purity HPSI 4H-SEMI 4H-N 10X10mm 5x5mm sic wafers DSP Application of silicon carbide in power device industry Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride ...
|
|
|
|
|
Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
|
|
|
|
|
4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers ...
|
|
|
|
|
4inch GaN-On-Sapphire Blue/Green LED Wafer Flat Sapphire 100 ± 0.2 mm 4 inch Blue LED GaN epitaxial wafer on sapphire SSP The key ingredient for blue LEDs is gallium nitride, a ...
|
|
|
|
|
8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR POWER RF Micro-LED application 8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application GaN epitaxial wafer (GaN EPI on ...
|
|
|
|
|
6" Silicon Epitaxial Wafer Substrate Thickness 290±20µm / Resistivity 0.008-0.025Ωcm , Epi Layer Thickness 10-15μm PAM-XIAMEN custom epitaxial or EPI wafer services on silicon ...
|
|
|
|
|
M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity ...
|
|
|
|
|
8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF Micro-LED application 8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application GaN epitaxial wafer (GaN EPI ...
|
|
|
|
|
5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a ...
|
|
|
|
|
8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application GaN epitaxial wafer (GaN EPI on Silicon) ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. ...
|
|
|
|
|
5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
|
|
|
|
|
4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers About GaN-on-GaN GaN-on-SIC Feature Introduce GaN epitaxial wafer: According to the different substrates, it is ...
|
|
|
|
|
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) ...
|
|
|
|
|
5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
|
|
|
|
|
5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
|
|
|
|
|
5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
|
|
|
|
|
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
|
|
|
|
|
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview We provide high-quality GaN substrates which are ...
|
|
|
|
|
2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
|
|
|
You may also be interested in :
