Results forgan epitaxial substrate un dopedfrom 507 Products.
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...
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Special Orientation A-axis R-axis M-axis 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth； Sapphire is one of the hardest materials, and possesses very ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), ...
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Laser Cavity Material Cerium Doped Quartz Glass Substrates used for UV cut-off The cerium doped quartz glass can effectively block the UV light, it is used as laser cavity. The ...
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X-cut and Z-cut LiNbO3 wafer 8 inch Large Size For Optical Use Lithium niobate is transparent between 0.25 and 5.3 μm. It can be used in visible, near IR and middle IR region. It ...
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2SC4541 Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.) • ...
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Low Optical Losses 7.09g/Cm3 Liquid Epitaxy Film SGGG Gd3Ga5O12 Substituted Gadolinium Gallium Garnet (SGGG, Gd3Ga5O12) is used as substrates for liquid epitaxy.GGG substrtae is ...
china
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Grinding Wheels for LED Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used ...
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Gadolinium gallium garnet (GGG) substrate, an excellent substrate material for Bi Fe garnet epitaxial films Gadolinium gallium garnet (GGG) substrate, one of the earlier developed ...
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Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate ...
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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
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Product Description: Aluminum Nitride Ceramic Product Overview GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed ...
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2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15° Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 ...
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4 inch GaN-on-Si epi wafer manufacturer Power HEMT Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate ...
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Sapphire substrate for blue and green LED components Product Description The materials used in blue and green light-emitting diodes are mainly GaN. Early GaN research has not made ...
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
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Description ScAlMgO4(MgScAlO4SCAM) crystal is a kind of GaN and ZnO heteroepitaxy recently developed with the ideal substrate material, currently it match the GaN and ZnO best in ...
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can ...
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Original electronic components Rectifier Diode 1 Phase 2Element 20A 200V V(RRM) Silicon SC-65 3PIN d92-02 Products Description: 1. D92-02 is an N-type silicon epitaxial ultrafast ...
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