Results for5x10 5mm2 gan epitaxial waferfrom 359 Products.
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3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm Silicon epitaxial wafer is a layer of single crystal silicon deposited ...
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers ...
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JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide ...
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can ...
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8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
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P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and ...
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Silicon Carbide (SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial ...
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can ...
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special shape sapphire optical lens with hole , Al2O3 single crystal glass, optical glass sapphire wafer,sapphire glass plate 2inch 3inch 0.4mm Sapphire wafers With customzied ...
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2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, ...
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4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ...
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3'' 4'' 350um 500um SSP DSP 4H- 6H- Research Dummy Grade SIC Epitaxial Substrates Features of SIC Wafers: Wide-band gap silicon carbide semiconductors are used to control and ...
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5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview The GaN semiconductor device market includes ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...
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2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,HVPE Gallium Nitride wafer,AlN templates III-Nitride(GaN,AlN,InN) Forbidden band width (light emitting ...
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A-Plane±0.2o Patterned Sapphire Substrates BOW≤-8~0μM Back Surface Roughness 0.8~1.2μm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The regular patterns created ...
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer 2inch GaN-ON-GaN PIN wafers on free-standing GaN ...
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3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink Overview Remarkable progress in CVD methods of diamond synthesis has made it ...
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