Results forgan on sic epi wafersfrom 587 Products.
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4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers About GaN-on-GaN GaN-on-SIC Feature Introduce GaN epitaxial wafer: According to the different substrates, it is ...
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GaN-on-SiC epi wafer supplier for RF application customized Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi...
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P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and ...
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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer About ...
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Wireless Communication Module QPA2511 100 Watt 50 Volt GaN On SiC Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent ...
china
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in ...
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Product Description: Our Horizontal Wafer Shipper is the perfect solution for multi horizontal wafer shipping, horizontal wafer packing box, and horizontal wafer packing box. It is ...
china
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HMC544AE RF Power Transistor Features: - High Output Power: 28 dBm Typical - High Gain: 14 dB Typical - Low Noise Figure: 2 dB Typical - Excellent Linearity - Wide Bandwidth: 600 ...
china
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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for ...
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8 Inch Dia 200mm Sapphire Wafer By 1.0mm Thickness 1sp For Epi - Ready Carrier Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and ...
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QPA2933 RF Amplifier 2.9-3.3GHz 60W GaN PA OVM Qorvo QPA2933 S-Band 60W GaN Power Amplifier Qorvo QPA2933 S-Band 60W GaN Power Amplifier is optimized for 2.9GHz to 3.3GHz, ...
china
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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
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Diamond Slurry 500ml 5L Water Based Diamond Slurry For LED Substrate SiC Wafer Diamond slurry is widely used for polishing and lapping a variety of materials, such as LED substrate...
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Product Description: GT-UVV-LW GaN UV Sensor Is Used For UV-curing Monitoring Gas Pollutants Detection Features: General Features: l Indium Gallium Nitride Based Material l ...
china
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Gadolinium Gallium Garnet GGG Substrates EPI Polish For YIG Gadolinium Gallium Garnet is a crystalline garnet (mixed oxide) material with numerous optical applications in addition ...
china
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HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer ...
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Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate ...
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
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OEM Advanced Technical Ceramic Components Semiconductor Ceramic Parts Ceramic Wafer Handling Material properties datasheet Al2O3 ZrO2/Y2O3 ZrO2/MgO MgO SiC Si3N4 Reaction sintered ...
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