Results for5x10 5mm2 gan epitaxial waferfrom 359 Products.
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Applications Laser diodes: violet LD, blue LD, and green LD ...
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2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum ...
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
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8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR POWER RF Micro-LED application 8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application GaN epitaxial wafer (GaN EPI on ...
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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum ...
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8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF Micro-LED application 8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application GaN epitaxial wafer (GaN EPI ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
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4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers ...
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8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application GaN epitaxial wafer (GaN EPI on Silicon) ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two...
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6" Silicon Epitaxial Wafer Substrate Thickness 290±20µm / Resistivity 0.008-0.025Ωcm , Epi Layer Thickness 10-15μm PAM-XIAMEN custom epitaxial or EPI wafer services on silicon ...
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4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers About GaN-on-GaN GaN-on-SIC Feature Introduce GaN epitaxial wafer: According to the different substrates, it is ...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Premium quality GaN crystal substrates with low ...
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4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon Layer / Phosphorus Doped Layer Ion Implantation Layer Silicon Sub Silicon epitaxial wafer is a layer of single crystal ...
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Double side polished 2inch 0.43mm thickness sapphire wafer C-axis R-axis A-axis m-plane sapphire substrate for GaN customized orientation Al2O3 single crystal wafer ,sapphire thick ...
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
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6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, ...
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