Results for5x10 5mm2 gan epitaxial waferfrom 369 Products.
|
|
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes ...
|
|
|
|
|
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through ...
|
|
|
|
|
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...
|
|
|
|
|
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, ...
|
|
|
|
|
SiC epitaxial wafer substrate Double-side polishing Semiconductor industrial applications Product Description: Silicon carbide (SiC Substrate) was discovered in 1893 as an ...
|
|
|
|
|
SiC Substrate High-Temperature and High-electronic Applications Epitaxial wafer substrate Product Description: The SiC Substrate also has a surface roughness of Ra<0.5nm, which is ...
|
|
|
|
|
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
|
|
|
|
|
B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical ...
|
|
|
|
|
customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
|
|
|
|
|
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
|
|
|
|
|
Special Orientation A-axis R-axis M-axis 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth； Sapphire is one of the hardest materials, and possesses very ...
|
|
|
|
|
4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth ...
|
|
|
|
|
JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm JDCD03-001-004 Overview Several methods of growing the epitaxial layer on existing silicon or other wafers ...
|
|
|
|
|
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the ...
|
|
|
|
|
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% ...
|
|
|
|
|
Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0μm± 25.0 μm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner ...
|
|
|
|
|
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
|
|
|
|
|
150.0 mm +0mm/-0.2mm Sic Epitaxial Wafer Off-Axis:4°Toward <11-20>±0.5 ° JDCD03-001-004 Overview A SiC wafer is a semiconductor made of silicon. Its flatness, thermal conductivity, ...
|
|
|
|
|
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and ...
|
|
|
|
|
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline ...
|
|
|
You may also be interested in :
