Results formosfet transistor 1a 65vfrom 10086 Products.
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N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Features Order codes VDSS @TJ max. RDS(on) max. ID STB34NM60ND ...
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Auto Transistors Vibration Bowl Feeder , Mosfet transistors vibrating bowl Intro: This transistor virabration bowl can feed mosfet transistors. Also we can customize feeders for ...
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NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature Dual SOIC−8 ...
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band ...
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FEATURES • Ultrafast recovery • Ultrasoft recovery • Very low IRRM • Very low Qrr • Specified at operating conditions • Designed and qualified for industrial level BENEFITS • ...
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) • High ...
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Power Transistor (−100V , −2A) 2SB1580 / 2SB1316 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode...
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2SA2222SG Power Mosfet Transistor Electronics Components Chip IC Electronics Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT process • Large ...
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2–16 GHz General Purpose Gallium Arsenide FET ATF-26884 Features • High Output Power: 18.0 dBm Typical P 1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz • Low Cost Plastic ...
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BUK95/9608-55A TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low ...
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TPC8020-H Field Effect Transistor Silicon N Channel MOS Type silicon circuit board · Small footprint due to small and thin package · High-speed switching · Small gate charge: Qg = ...
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PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ...
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS ...
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IRF3205PbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free ...
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STK0765BF Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=650V(Min.) • Low Crss : Crss=13pF(Typ.) • Low gate charge : Qg=32nC(Typ.) • Low RDS...
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N-Channel Enhancement Mode MOSFET Features · 25V/50A , RDS(ON) =7.5mW(typ.) @ VGS =10V RDS(ON) =13mW(typ.) @ VGS =4.5V · Super High Dense Cell Design · Avalanche Rated · Reliable ...
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STOCK LIST LPC1768FBD100 1500 NXP 16+ LQFP100 LPC2148FBD64 1500 NXP 16+ LQFP64 MA1050 1500 SANKEN 15+ ZIP MAX3232CPE 1500 MAX 16+ DIP MC14001BCPG 1500 ON 15+ DIP MT2060F 1500 ...
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IRF1010N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description ...
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HEXFET Power MOSFET VDSS RDS(on) max ID 200V 0.082Ω 31A Applications High Frequency DC-DC converters Lead-Free Benefits Low Gate to Drain to Reduce Switching Losses Fully ...
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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors Features • RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A • Fast Switching Speed • Low Gate Charge • High ...
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