Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (π-MOSVI) 2SK3568
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Weight : 1.7 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
| Drain−source voltage | VDSS | 900 | V | |
| Drain−gate voltage (RGS = 20 kΩ) | VDGR | 900 | V | |
| Gate−source voltage | VGSS | ±30 | V | |
| Drain current | DC (Note 1) | ID | 9 | A |
| Pulse (Note 1) | IDP | 27 | A | |
| Drain power dissipation (Tc = 25°C) | PD | 150 | W | |
| Single pulse avalanche energy (Note 2) | EAS | 663 | mJ | |
| Avalanche current | IAR | 9 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 15 | mJ | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | −55~150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
