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PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER

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Anterwell Technology Ltd.

PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

PZT2222A NPN SILICON TRANSISTOR

NPN GENERAL PURPOSE AMPLIFIER

 

FEATURES

* This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

 

 

ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETERSYMBOLRATINGSUNIT
Collector-Base VoltageVCBO75V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC0.6A
Total Device DissipationPC1W
Junction TemperatureTJ+150°C
Storage TemperatureTSTG-55 ~ +150°C

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

 

 

 

 

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