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STK0765BF rf power mosfet transistors electrical ic Power Mosfet Transistor Advanced Power MOSFET

Anterwell Technology Ltd.
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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

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Anterwell Technology Ltd.

STK0765BF rf power mosfet transistors electrical ic Power Mosfet Transistor Advanced Power MOSFET

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

STK0765BF Advanced Power MOSFET

 

SWITCHING REGULATOR APPLICATIONS

 

Features

• High Voltage: BVDSS=650V(Min.)

• Low Crss : Crss=13pF(Typ.)

• Low gate charge : Qg=32nC(Typ.)

• Low RDS(on) :RDS(on)=1.2Ω(Typ.)

 

Ordering Information

Type NO.                    Marking               Package Code    

STK0765BF               STK0765              TO-220F-3L       

 

Absolute maximum ratings (Tc=25°C)

CharacteristicSymbolRatingUnit
Drain-source voltageVDSS650V
Gate-source voltageVGSS±30V
Drain current (DC)(Tc=25℃)ID7A
(Tc=100℃)4.4A
Drain current (Pulsed) *IDP28A
Drain power dissipationPD52W
Single pulsed avalanche energy ②EAS340mJ
Avalanche current (Repetitive) ①IAR5.2A
Repetitive avalanche energy ①EAR13mJ
Junction temperatureTJ150°C
Storage temperature rangeTstg-55~150°C

* Limited by maximum junction temperature

Note :

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=10mH, IAS=7A, VDD=50V, RG=25Ω , starting TJ=25℃

 

Outline Dimensions                                                                                                       unit : mm

 

 

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