Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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BUK95/9608-55A
TrenchMOS™ logic level FET
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D2-PAK).
Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
Applications
■ Automotive and general purpose power switching:
♦ 12 V and 24 V loads
♦ Motors, lamps and solenoids.
Quick reference data
| Symbol | Parameter | Conditions | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS | drain-source voltage (DC) | - | 55 | V | |
| ID | drain current (DC) | Tmb = 25 °C; VGS = 5 V | - | 125 | A |
| Ptot | total power dissipation | Tmb = 25 °C | - | 253 | W |
| Tj | - | 175 | °C | ||
| RDSon | drain-source on-state resistance | Tj = 25 °C; VGS = 5 V; ID = 25 A | 6.8 | 8 | mΩ |
| Tj = 25 °C; VGS = 4.5 V; ID = 25 A | - | 8.5 | mΩ | ||
| Tj = 25 °C; VGS = 10 V; ID = 25 A | 6.4 | 7.5 | mΩ |
Simplified outline Symbol
Stock Offer (Hot Sell)
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