Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Power Transistor (−100V , −2A) 2SB1580 / 2SB1316
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
External dimensions (Unit : mm)
Absolute maximum ratings (Ta = 25°C)
| Parameter | Symbol | Limits | Unit | |
| Collector-base voltage | VCBO | -100 | V | |
| Collector-emitter voltage | VCEO | -100 | V | |
| Emitter-base voltage | VEBO | -8 | V | |
| Collector current | IC | -2 | A(DC) | |
| -3 | A(Pulse) ∗1 | |||
| Collector power dissipation | 2SB1580 | PC | 2 | W ∗2 |
| 2SB1316 | 1 | |||
| 10 | W(Tc=25°C) | |||
| Junction temperature | Tj | 150 | °C | |
| Storage temperature | Tstg | -55 to +150 | °C | |
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and hFE
| Type | 2SB1580 | 2SB1316 |
| Package | MPT3 | CPT3 |
| hFE | 1k to 10k | 1k to 10k |
| Marking | BN∗ | -- |
| Code | T100 | TL |
| Basic ordering unit (pieces) | 1000 | 2500 |
∗ Denotes hFE
Electrical characteristics curve
