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Results forgan substratefrom 206 Products.
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
Shanghai, china
Verified
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
Verified
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
Verified

GaN Substrates

Apr,24,2024
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
Anhui, china
Verified
GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0...
2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15° Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 ...
Chongqing, china
Member
2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
Fujian, china
Member
Product Description: Aluminum Nitride Ceramic Product Overview GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed ...
Jiangsu, china
Verified
Description ScAlMgO4(MgScAlO4SCAM) crystal is a kind of GaN and ZnO heteroepitaxy recently developed with the ideal substrate material, currently it match the GaN and ZnO best in ...
Shanghai, china
Member
Sapphire substrate for blue and green LED components Product Description The materials used in blue and green light-emitting diodes are mainly GaN. Early GaN research has not made ...
Chongqing, china
Member
HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer ...
Henan, china
Member
ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and ...
Henan, china
Member
Semiconductor Sapphire Wafer Sapphire Windows Piezoelectric Wafer Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it ...
Shanghai, china
Verified
Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
Verified
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview GaN Substrates GaN (gallium nitride) substrates and ...
Shanghai, china
Verified
5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
Shanghai, china
Verified
M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity ...
Shanghai, china
Verified
5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
Shanghai, china
Verified
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Applications Laser diodes: violet LD, blue LD, and green LD ...
Shanghai, china
Verified
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
Shanghai, china
Verified
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