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2 Inch Mg-Doped GaN Thin Films On Sapphire Substrates For GaN Power Device PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
Fujian, china
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8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
Shanghai, china
Verified
4 Inch LiNbO3 Wafer Polished 0.25mol% Er Dope Or 5mol% MgO Dope For Optical Applications Doped LN Wafers: Er:LN, MgO:LN, and Fe:LN Doping lithium niobate (LN) wafers with specific ...
Shanghai, china
Verified
4 Inch Mg-Doped GaN Material On C(0001) Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum ...
Fujian, china
Member
4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
Fujian, china
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2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum ...
Fujian, china
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2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
Fujian, china
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(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
Fujian, china
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10*10mm2 N-GaN Freestanding GaN Substrate, Epi-Ready With Double Side Polished PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
Fujian, china
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A Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. ...
Fujian, china
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10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which ...
Fujian, china
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(20-21) Plane U-GaN Freestanding Gallium Nitride (GaN) Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which ...
Fujian, china
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(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy​ PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
Fujian, china
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(10-11) Crystal Plane Si-GaN Freestanding GaN Substrate -Powerway Wafer PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
Fujian, china
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A Plane U-GaN Freestanding Hvpe-GaN Substrate For Iii-Nitride Devices PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer ...
Fujian, china
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(10-11) Plane N-GaN Freestanding GaN Substrate For Nonodevices PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which ...
Fujian, china
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Low Resistivity (11-22) Plane N-GaN Freestanding GaN Substrate By HVPE PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer ...
Fujian, china
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Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs) PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
Fujian, china
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2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
Fujian, china
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Freestanding GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld Freestanding GaN substrate PAM-XIAMEN has established the manufacturing technology for freestanding ...
Fujian, china
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