Results forfe doped gan substratesfrom 416 Products.
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4 Inch Freestanding GaN Substrates As III-Nitride Semiconductor Materials PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate Single ...
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(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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Laser Cavity Material Cerium Doped Quartz Glass Substrates used for UV cut-off The cerium doped quartz glass can effectively block the UV light, it is used as laser cavity. The ...
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
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X-cut and Z-cut LiNbO3 wafer 8 inch Large Size For Optical Use Lithium niobate is transparent between 0.25 and 5.3 μm. It can be used in visible, near IR and middle IR region. It ...
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Semi-Insulating ,Fe-Doped Indium Phosphide Substrate , 4”, Test Grade PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. ...
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high temperature pressure temperature abrasion resistance sapphie step optical lens hardness 9.0 sapphire bearing for rolling bearing components/Round/sector sapphire glass/ ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...
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High purity HPSI 4H-SEMI 4H-N 10X10mm 5x5mm sic wafers DSP Application of silicon carbide in power device industry Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride ...
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Blue Sapphire row gem Fe Ti doped Kashmir Oceanic Azure Gem Crystal Azure Sky Jewel *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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2 inch monocrystalline sapphire wafer double sides polished Al2O3 99.999% single crystal substrate Product description Sapphire wafer is a common substrate for the preparation of ...
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Double Side Polish Silicon Carbide Wafer 2-8'' 4H N - Doped SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, ...
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