4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes

4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes

PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.

PAM-XIAMEN’sGaN on sapphire templates are available in diameters from 2" up to 6",and consist of a thin layer of crystalline GaN grown on a sapphire substrate. Epi-ready templates now available..

Here shows detail specification:

4inch Si-Doped GaN/Sapphire Substrates

4inch Si-Doped GaN/Sapphire Substrates

FWHM and XRD report

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

Testing Project: FWHM and XRD project

The half-height full width (FWHM) is an expression of the range of functions given by the difference between two extreme values of the independent variable equal to half of its maximum. In other words, it is the width of the spectral curve measured between those points on the Y-axis, which is half the maximum amplitude.

Below is an example of FWHM and XRD of AlN template:

FWHM and XRD of AlN template

FWHM and XRD of AlN template

Here we show experiment as an example:

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:

All GaN film samples were deposited on different substrates by PLD at 1000 ◦C in a nitrogen plasma ambient atmosphere. The chamber was pumped down to 10−6 Torr before the deposition process began, and N2 gas (with a purity of 99.999%) was introduced. The working pressure once the N2 plasma was injected was 1.13 × 10−4 Torr. A KrF excimer laser (λ = 248 nm, Lambda Physik, Fort Lauderdale, FL, USA) was employed as the ablation source and operated with a repetition rate of 1 Hz and a pulse energy of 60 mJ. The average growth rate of the GaN film was approximately 1 µm/h. The laser beam was incident on a rotating target at an angle of 45◦ . The GaN target was fabricated by HVPE and set at a fixed distance of 9 cm from the substrate before being rotated at 30 rpm during film deposition. In this case, ~4 µm-thick GaN films were grown on a GaN/sapphire template (sample A), sapphire (sample B), Si(111) (sample C), and Si(100) (sample D). For the GaN on sample A, a 2-µm GaN layer was firstly deposited on sapphire substrate by MOCVD. Scanning electron microscopy (SEM, S-3000H, Hitachi, Tokyo, Japan), transmission electron microcopy (TEM, H-600, Hitachi, Tokyo, Japan), atomic force microscopy (AFM, DI-3100, Veeco, New York, NY, USA), double-crystal X-ray diffraction (XRD, X’Pert PRO MRD, PANalytical, Almelo, The Netherlands), low-temperature photoluminescence (PL, Flouromax-3, Horiba, Tokyo, Japan), and Raman spectroscopy (Jobin Yvon, Horiba, Tokyo, Japan) were employed to explore the microstructure and optical properties of the GaN templates deposited on different substrates. The electrical properties of the GaN films were determined by Van der Pauw-Hall measurement under liquid nitrogen cooling at 77 K

The electrical resistivity of the GaN films grown on different substrates is shown in Figure 5a. The electrical resistivity of the four samples was found to be in the range 16.2–32.8 Ω·cm. The electrical resistivity of sample D was the largest, while that of sample A was the smallest. The electrical resistivity correlates with defect density, and the high defect density in the films may cause a decrease in the electrical resistivity [30]. The values of electrical resistivity of samples C and D were very close, which is consistent with the structural features of the films grown on these substrates, as discussed above. As electrical resistivity is inversely proportional to the carrier concentration and carrier mobility, the electrical resistivity of the films grown on the different substrates can be determined from their measdiscuurements. Low-temperature Hall measurement data from GaN films grown on the different substrates are shown in Figure 5b,c. Sample A showed the lowest carrier concentration and highest carrier mobility, thereby resulting in an increased number of conductive paths. The carrier concentration in sample D was higher than that in the others, whereas its carrier mobility was the lowest. This can be attributed to the existence of a high intrinsic defect and several grain boundaries in the film. These defects trap and scatter moving electrons, thus decreasing their mobility in the GaN films [31,32].

Figure 5. Variation in (a) resistivity; (b) carrier concentration; and (c) mobility of GaN films with different substrates

Conclusion: the GaN thick films grown on a GaN/sapphire template, sapphire, Si(111), and Si(100) by high-temperature PLD. The substrate effect on GaN crystalline growth quality, surface morphology, stress behavior, and interface property were studied, if you need more product information, please enquire us.