Results for4 h epitaxial silicon waferfrom 127 Products.
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2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
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5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) ...
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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Test Grade 4" Test Wafer PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
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2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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4 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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8 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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