Results for4 h epitaxial silicon waferfrom 127 Products.
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4 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 10nm/50nm 4" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading ...
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4 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 4" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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3 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 3" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 3" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of ...
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2 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 2" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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12 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 12" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of ...
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3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 3" Double Side Etched Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading ...
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3" Dummy Grade / Mechanical Grade Silicon Wafer , SSP , Thickness 340-380μm , No Scratch Films Etch Patterns Or Residues Found in 1990,Xiamen Powerway Advanced Material Co., Ltd ...
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4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers ...
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6" Silicon Epitaxial Wafer Substrate Thickness 290±20µm / Resistivity 0.008-0.025Ωcm , Epi Layer Thickness 10-15μm PAM-XIAMEN custom epitaxial or EPI wafer services on silicon ...
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4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon Layer / Phosphorus Doped Layer Ion Implantation Layer Silicon Sub Silicon epitaxial wafer is a layer of single crystal ...
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3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm Silicon epitaxial wafer is a layer of single crystal silicon deposited ...
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray ...
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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for ...
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can ...
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can ...
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Silicon Wafer Back Grinding Wheel Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding ...
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Silicon Wafer Back Grinding Wheel Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding ...
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Product Description PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed ...
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