Results for4 h epitaxial silicon waferfrom 1389 Products.
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Product Description Product Parameter Company Information Workshop Certificate Exhibition FAQ 1: Are you trading company or manufacturer? We have been the world's leading ...
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china
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9*9 Inch 56g Manufacturer High Tech Poly-cellulose Nonwoven Cleanroom Wiper manufacturer Description: Myesde dry nonwoven cleanroom wipers are made from 45% polyester / 55% ...
china
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High purity HPSI 4H-SEMI 4H-N 10X10mm 5x5mm sic wafers DSP Application of silicon carbide in power device industry Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride ...
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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Test Grade 4" Test Wafer PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
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9*9 Inch 56g Manufacturer High Tech Poly-cellulose Nonwoven Cleanroom Wiper manufacturer Description: Myesde dry nonwoven cleanroom wipers are made from 45% polyester / 55% ...
china
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SiC epitaxial wafer substrate Double-side polishing Semiconductor industrial applications Product Description: Silicon carbide (SiC Substrate) was discovered in 1893 as an ...
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2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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9*9 Inch 56g Manufacturer High Tech Poly-cellulose Nonwoven Cleanroom Wiper manufacturer Description: Myesde dry nonwoven cleanroom wipers are made from 45% polyester / 55% ...
china
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3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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Feature: Excellent chemical resistance for compatibility with a variety of solutions; Material/Structure: 45% polyester / 55% cellulose nonwoven colorfast material with a cut edge;
china
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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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4 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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8 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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8 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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12 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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