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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
Shanghai GaNova Electronic Information Co., Ltd.
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<div style=" color: #666666;font-size: 11px;left: 20px;line-height: 22px;font-family:Verdana,Arial;"><div>For the best results, we recommend including the following details:</div><ul style="list-style: none outside none;margin:0;padding:0;text-indent: 5px;"><li>-Self introduction</li><li>-Required specifications</li><li>-Inquire about price/MOQ</li></ul></div>
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