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HPSI 4H-SEMI transparent colorless customized sic lens high purity Application of silicon carbide in power device industry Performance Unit Silicon Si Silicon Carbide SiC Gallium ...
Shanghai, china
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High purity HPSI 4H-SEMI 4H-N 10X10mm 5x5mm sic wafers DSP transparent sic crystal optical lens 4H-SEMI by customzied size Application of silicon carbide in power device industry ...
Shanghai, china
Verified
6inch sic substrates ,6inch sic wafers, sic crystal ingots , sic crystal block ,sic semiconductor substrates,Silicon Carbide Wafer 6 inch diameter, Silicon Carbide (SiC) Substrate ...
Shanghai, china
Verified
4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
Shanghai, china
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6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm 4H Semi SiC Substrate Research Grade Single Crystal 2inch dia50mm 330μm thickness ...
Shanghai, china
Verified
Product Description: Silicon carbide materials have prospect in numerous sectors, for instance, high-speed rail, automotive electronics, smart grids, photovoltaic inverters, ...
Shanghai, china
Verified
Product Description: From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, ...
Shanghai, china
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
Shanghai, china
Verified
4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices SiC ...
Shanghai, china
Verified
Product Description: Silicon carbide materials have a wide range of applications in various hi-tech fields such as high-speed rail, automotive electronics, smart grids, photovoltai...
Shanghai, china
Verified
3'' 4'' 350um 500um SSP DSP 4H- 6H- Research Dummy Grade SIC Epitaxial Substrates Features of SIC Wafers: Wide-band gap silicon carbide semiconductors are used to control and ...
Shanghai, china
Verified
6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic ...
Shanghai, china
Verified
10x10mm 5x5mm customized square sic substrates ,1inch sic wafers,sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer ----------------...
Shanghai, china
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, 4h-semi 4h-N customized square shape sic wafers Application ...
Shanghai, china
Verified
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers ...
Shanghai, china
Verified
8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
Shanghai, china
Verified
4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconducto...
Shanghai, china
Verified
10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research Grade SiC Crystal Substrate 4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide ...
Shanghai, china
Verified
Product Description: From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, ...
Shanghai, china
Verified
Product Description: From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, ...
Shanghai, china
Verified
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