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6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth high purity undoped or transparent colorless sic optical lens wafer for Quantum light ...
Shanghai, china
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6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network ...
Shanghai, china
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4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers 6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm ...
Shanghai, china
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC ...
Shanghai, china
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6inch sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into ...
Shanghai, china
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than ...
Shanghai, china
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2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer About Silicon Carbide SiC crystal Advantagement • Low lattice ...
Shanghai, china
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures ...
Shanghai, china
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Silicon Carbide Ceramic Substrate,SIC ceramic parts, customized polishing silicon carbide ceramic bearing ring 1. Introduction: 1. SIC Cermaic has the advantages of super hardness, ...
Shanghai, china
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JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost ...
Shanghai, china
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6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth 6inch sic substrates, sic ingot sic crystal ingots sic crystal block sic semiconductor ...
Shanghai, china
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Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over ...
Shanghai, china
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4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 6inch 4H-N 500mm 350um sic substrate wafer for powder device 6 inch diameter, Silicon Carbide ...
Shanghai, china
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
Shanghai, china
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2inch Silicon Carbide Wafers 6H or 4H-N type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers What is a sic ...
Shanghai, china
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6inch sic substrates, sic ingot sic crystal ingots sic crystal block sic semiconductor substrates 2inch 3inch 4inch 6inch 4h no doped wafer we can provides high quality single ...
Shanghai, china
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power ...
Shanghai, china
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silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3...
Shanghai, china
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silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3...
Shanghai, china
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Hardness9.4 colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer for High transmittance optical application SiC Wafer Feature Property 4H-SiC, Single ...
Shanghai, china
Verified
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