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BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: ...
Guangdong, china
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BFQ67 / BFQ67R / BFQ67W Silicon NPN Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component ...
Guangdong, china
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide ...
Guangdong, china
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RF Power Transistors TEA6845H V2 557 High Performance Reliability Package 256-LFBGA Product Listing: TEA6845H V2 557 RF Power Transistors Product Description: The TEA6845H/V2 RF ...
china
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TXtelsig YP242434 Wifi RF Amplifier 2.4GHz 802.11b/g/n WLAN Power Amplifier The YP242434 is a high-power, high- linearity power amplifier based on the highly-reliable InGaP/GaAs ...
Guangdong, china
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MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co....
china
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed ...
HongKong, china
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china
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BFQ67W SOT-23 Electronics Integrated Circuits Complementary Silicon NPN Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • ...
china
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LDMOS RF Transistor Cu/Mo/Cu Flanges With Good Heat Dissipation Description: Cu/Mo/Cu(CMC) is a sandwich composite including a molybdenum core layer and two copper clad layers. It ...
Hunan, china
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PXAC241702FC-V1-R250 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFP-LD10M Description ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design ...
Guangdong, china
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SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family...
Guangdong, china
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Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuratio...
china
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Vishay Discrete RF Power Transistor Trans MOSFET SI7615ADN-T1-GE3 Product Specifications:SI7615ADN.pdf SI7615ADN-T1-GE3 Specifications Part Status Active FET Type P-Channel ...
china
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SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous ...
china
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Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel ...
china
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Power Up with IRFP260 MOSFET Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your ...
china
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IC Integrated Circuits BFU790F,115 SOT-343 Transistors Specifications Product Attribute Attribute Value Manufacturer: NXP Product Category: RF Bipolar Transistors RoHS: Details ...
china
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high...
Shanghai, china
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