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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
The PD85035-E is a common source N-channel,enhancement-mode lateral
field-effect RF power
transistor. It is designed for high gain, broadband commercial and
industrial applications.
It operates at 13.6 V in common source mode at frequencies of up to
1 GHz.
PD85035-E boasts the excellent gain, linearity and reliability of
ST's latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85035-E’s superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability,
is the first ST JEDEC
approved, high power SMD package. It has been specially optimized
for RF needs and offers
excellent RF performances and ease of assembly.
RF Mosfet 13.6 V 150 mA 870MHz 16dB 15W PowerSO-10RF (Straight
Lead)/ (formed lead)
Category | Electronic components |
RF power transistor | |
Mfr | ST |
Series | MOSFETS |
Product Status | Active |
Type | LdmoST plastic family |
Mounting Type | Surface Mount |
Package / Case | PowerSO-10RF |
Supplier Device Package | PowerSO-10RF (straight lead)(formed lead) |
Base Product Number | PD85035 |
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8543.70.9860 |
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