TEA6845H V2 557 High Power Rf Transistor High Performance Reliability

RF Power Transistors TEA6845H V2 557 High Performance Reliability Package 256-LFBGA

Product Listing:

TEA6845H V2 557 RF Power Transistors

Product Description:

The TEA6845H/V2 RF Power Transistor is a high power, Silicon N-Channel, vertical MOSFET designed to operate in the HF to VHF frequency range. It is ideal for use in high frequency power amplifiers and switching applications.

Features:
• High power output
• High power gain
• Low noise
• High reliability
• Low distortion
• Low thermal resistance
• Low gate charge
• Low gate-drain capacitance
• High input impedance

Specifications:
• Power Dissipation: 557W
• Frequency Range: HF-VHF
• Operating Voltage: 25V
• Maximum Drain Current: 0.6A
• Maximum Drain-Source Voltage: 40V
• Power Gain: 10dB
• Thermal Resistance: 0.15°C/W

 
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