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BFQ67W general purpose transistor npn Power Mosfet Transistor Silicon NPN Planar RF Transistor

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Anterwell Technology Ltd.

BFQ67W general purpose transistor npn Power Mosfet Transistor Silicon NPN Planar RF Transistor

Country/Region china
City & Province shenzhen guangdong
Categories Solar Chargers
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Product Details

 

BFQ67 / BFQ67R / BFQ67W

Silicon NPN Planar RF Transistor

 

Features

• Small feedback capacitance

• Low noise figure

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

 

Applications

Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

 

Mechanical Data

Typ: BFQ67

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: V2

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

 

Typ: BFQ67R

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: R67

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

 

Typ: BFQ67W

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Marking: WV2

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

 

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

ParameterTest conditionSymbolValueUnit
Collector-base voltage VCBO20V
Collector-emitter voltage VCEO10V
Emitter-base voltage VEBO2.5V
Collector current IC50mA
Total power dissipationTamb ≤ 60 °CPtot200mW
Junction temperature Tj150°C
Storage temperature range Tstg- 65 to + 150°C

 

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

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