Results forindium arsenide waferfrom 180 Products.
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3inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer (A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
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4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, ...
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2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD Indium phosphide single crystal material is one of most important ...
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2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal The tCZ growth (modified Czochralski method...
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Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, ...
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VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the ...
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Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, ...
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4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, ...
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2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
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4inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer (A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
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ZnO substrates,10X10mm small square Zinc oxide wafer,5x5mm ZnO substrates in different orientations, ZnO single crystal ------------------------------------------------------------...
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ZnO substrates,5X5mm small square Zinc oxide wafer,5x5mm ZnO substrates in different orientations, ZnO single crystal. -------------------------------------------------------------...
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LaAlO3 substrates,10X10mm small square Lanthanum aluminate LaAlO3crystal substrate single crystals ---------------------------------------------------------------------------------...
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VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide ...
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VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, ---------------------------------------------------------------...
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4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, ...
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3’’ Undopped InSb Wafers IR Detector Photodiode Thermal Image Sensor 85 GHz Description: 1. Indium antimonide is a direct band gap semiconductor material that belongs to the ...
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4Inch GaAs Wafers Gallium Arsenide Substrates DSP ------------------------------------------------------------------------------------------------------------------------------ ...
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