Results forgan epitaxial substrate un dopedfrom 507 Products.
|
|
2inch free-standing GaN substrates,GaN wafer for LD,semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer, III-Nitride(GaN,AlN,InN) ...
|
|
|
|
|
Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing ...
|
|
|
|
|
Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate ...
|
|
|
|
|
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of ...
|
|
|
|
|
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
|
|
|
|
|
2inch free-standing GaN substrates,GaN wafer for LD,semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer, III-Nitride(GaN,AlN,InN) ...
|
|
|
|
|
Back Surface Roughness 0.8~1.2μm Patterned Sapphire Substrates Flat Edge Width 16±1.0mm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material Patterned Sapphire ...
|
|
|
|
|
Magnesium aluminate spinel (MgAl2O4) or Co:MgAl2O4 crystal substrate crystals size 10x10x0.5mmt 1sp/2sp for radars Product Name: Product Description: Specifications: Product Name: ...
|
|
|
|
|
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, 4h-semi 4h-N customized square shape sic wafers Application ...
|
|
|
|
|
A-Plane±0.2o Patterned Sapphire Substrates BOW≤-8~0μM Back Surface Roughness 0.8~1.2μm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The regular patterns created ...
|
|
|
|
|
C-axis (0001) orientation 12inch diameter 300mm with notch DSP Sapphire Substrate wafers thickness 1.5mm C-a Diameter 156mm 200mm 8inch double side polished Sapphire Substrate for ...
|
|
|
|
|
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer, GaN Specifications/Special Features: Gallium nitride (GaN...
|
|
|
|
|
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) ...
|
|
|
|
|
3inch 300um 500um sapphire wafers sapphire substrate C-plane for epitaxial growth Ultra-thin 2inch sapphire DSP wafers thickness 100um 0.1mm 2inch 100um Ultra Thin sapphire wafers ...
|
|
|
|
|
2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer About GaN Feature Introduce The growing demand ...
|
|
|
|
|
4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth ...
|
|
|
|
|
6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, ...
|
|
|
|
|
P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For ...
|
|
|
|
|
JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or ...
|
|
|
|
|
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then ...
|
|
|
You may also be interested in :
