Results forgan epitaxial substrate un dopedfrom 507 Products.
|
|
10x15mm 100 Orientation Gallium oxide GaO substrate 100 orientation with Fe doped 10x15mm Gallium oxide GaO substrate 100 orientation 10x10mm Gallium oxide substrate monocline ...
|
|
|
|
|
Round <100> LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material ...
china
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
4H-N/SI<0001>260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices ...
|
|
|
|
|
2 Inch Mg-Doped GaN Thin Films On Sapphire Substrates For GaN Power Device PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
|
|
|
|
|
2inch 4inch 6inch GaN-ON-sapphire Blue led Green LED epi-wafer PSS Wafers As a leading manufacturer and supplier of GaN (Gallium Nitride) epi wafers, we offer 2-6inch GaN on ...
|
|
|
|
|
4inch Diameter 500µm Thick GSGG Substrates Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims. In optical commuication equipment, a large number of 1.3 and ...
china
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
2-Inch SiC Substrate 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm No Secondary Flat JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave ...
|
|
|
|
|
VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide ...
|
|
|
|
|
Substituted GGG (SGGG) EPI 1sp Single Crystal Substrates SGGG single crystal, (substituted gadolinium gallium garnet) is grown by Czochralski method . SGGG crystals with calcium, ...
china
|
|
|
|
|
2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate Single ...
|
|
|
|
|
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal ...
|
|
|
|
|
6inch sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into ...
|
|
|
|
|
<111> Orientation Gallium Gadolinium Garnet Single Crystal Substrates GGG single crystal substrates of different tangential,which can achieve the best lattice match with this ...
china
|
|
|
|
|
2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer Indium phosphide (InP) is an important compound semiconductor material with the advantages of high ...
|
|
|
|
|
4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide ...
|
|
|
|
|
3 Inch Diameter SGGG Substrate Film (Subsituted Gadolinium Gallium Garnet) SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by Czochralski method . SGGG ...
china
|
|
|
|
|
LSAT Lanthanum-Strontium Aluminium Tantalate Crystal Substrates LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 is a newly developing crystal with peroviskite structure and twin-free. LSAT has ...
china
|
|
|
|
|
YIG SGGG Substrates Wafer SGGG single crystal, substituted gadolinium gallium garnet is grown by Czochralski method . SGGG substrate is excellent for for growing bismuth-substitute...
china
|
|
|
You may also be interested in :
