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6inch SiC Epitaxial Wafer

Shanghai GaNova Electronic Information Co., Ltd.

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Address: Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai

Contact name:Xiwen Bai (Ciel)

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Shanghai GaNova Electronic Information Co., Ltd.

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6inch SiC Epitaxial Wafer

Country/Region china
City & Province shanghai shanghai
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Product Details

P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 °

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For Power And Microw

 

6inch 4H-SiC substrate N-Type

 

Overview

Our company hava a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.

 

 

Property

P-MOS GradeP-SBD GradeD Grade
Crystal Form4H
PolytypeNone PermittedArea≤5%
(MPD) a≤0.2 /cm2≤0.5 /cm2≤5 /cm2
Hex PlatesNone PermittedArea≤5%
Hexagonal PolycrystalNone Permitted
Inclusions aArea≤0.05%Area≤0.05%N/A
Resistivity0.015Ω•cm—0.025Ω•cm0.015Ω•cm—0.025Ω•cm0.014Ω•cm—0.028Ω•cm
(EPD)a≤4000/cm2≤8000/cm2N/A
(TED)a≤3000/cm2≤6000/cm2N/A
(BPD)a≤1000/cm2≤2000/cm2N/A
(TSD)a≤600/cm2≤1000/cm2N/A
Stacking Fault≤0.5% Area≤1% AreaN/A

 

Surface Metal Contamination

 

(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2

Diameter150.0 mm +0mm/-0.2mm
Surface OrientationOff-Axis:4°toward <11-20>±0.5 °
Primary Flat Length47.5 mm ± 1.5 mm
Secondary Flat LengthNo Secondary Flat
Primary Flat OrientationParallel to<11-20>±1°
Secondary Flat OrientationN/A
Orthogonal Misorientation±5.0°
Surface FinishC-Face:Optical Polish,Si-Face:CMP
Wafer EdgeBeveling

Surface Roughness

(10μm×10μm)

Si Face Ra≤0.20 nm ; C Face Ra≤0.50 nm
Thickness a350.0μm± 25.0 μm
LTV(10mm×10mm)a≤2μm≤3μm
(TTV)a≤6μm≤10μm
(BOW) a≤15μm≤25μm≤40μm
(Warp) a≤25μm≤40μm≤60μm
Chips/IndentsNone Permitted ≥0.5mm Width and DepthQty.2 ≤1.0 mm Width and Depth

Scratches a

(Si Face,CS8520)

≤5 and Cumulative Length≤0.5×Wafer Diameter

≤5 and Cumulative Length≤1.5×Wafer

Diameter

TUA(2mm*2mm)≥98%≥95%N/A
CracksNone Permitted
ContaminationNone Permitted
PropertyP-MOS GradeP-SBD GradeD Grade
Edge Exclusion3mm

Remark: 3mm edge exclusion is used for the items marked with a.

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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