Results forgallium arsenide waferfrom 398 Products.
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
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Transparent Orange Undopped GaP Wafers P Type N Type 200um 350um 5G Light Emitting Description: Gallium Phosphide GaP, an important semiconductor of unique electrical properties as ...
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GaSb wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure ...
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GaP Wafer, Gallium Phosphide single crystal Orientation (111)A 0°±0.2 Solar Cells Product Description: Gallium Phosphide GaP, an important semiconductor of unique electrical ...
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Substituted Gadolinium gallium garnet GSGG Single Crystal Wafer Substituted Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims. In optical commuication ...
china
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2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) ...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates About GaN-on-GaN Feature Introduce ...
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GaSb wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Welcome to Know AlN Template on Diamond~~ Advantages of AlN • ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline Introduce of InAs substrate Indium InAs or indium mono-arsenide is a semiconductor composed ...
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Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM<350arcsec 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical ...
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4'' 6'' AIN On Silicon Substrates SSP DSP Semiconductor Wafers 100nm 200nm Layer Description: Aluminum Nitride on Silicon Wafers is a new type of semiconductor material that offers ...
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10x10mm Gallium oxide substrate monocline structure ------------------------------------------------------------------------------------------------------------------------------ ...
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SD customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area Diamond has wide band gap, high thermal conductivity, high breakdown field strength, high ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Aluminum nitride (AlN) is one of the few non-metallic materials ...
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4'' 200nm AlScN Template On Silicon SSP DSP Epitaxial Substrates for LED Devices Features: Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on ...
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