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3 Inch 625um Technical Ceramic Parts GaSb Wafer Gallium Antimonide

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

Contact name:Daniel

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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3 Inch 625um Technical Ceramic Parts GaSb Wafer Gallium Antimonide

Country/Region china
City & Province zhengzhou henan
Categories Steel Sheets
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Product Details

 

GaSb wafer ( Gallium Antimonide )

 

We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and good surface finish . Please contact us for more product information .

 

III-V Compound Wafer

We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .

 

Electrical and Doping Specification

 

Product Specification

 

GrowthLEC
DiameterØ 2" / Ø 3"
Thickness500 um ~ 625 um
Orientation<100> / <111> / <110> or others
Off orientationOff 2° to 10°
SurfaceOne side polished or two sides polished
Flat optionsEJ or SEMI. Std .
TTV<= 10 um
EPD<= 1000 cm-2
GradeEpi polished grade / mechanical grade
PackageSingle wafer container
 

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