Home Companies Shanghai GaNova Electronic Information Co., Ltd.

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

Shanghai GaNova Electronic Information Co., Ltd.

Contact Us

[China] country

Trade Verify

Address: Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai

Contact name:Xiwen Bai (Ciel)

Inquir Now

Shanghai GaNova Electronic Information Co., Ltd.

Verified Suppliers
  • Trust
    Seal
  • Verified
    Supplier
  • Credit
    Check
  • Capability
    Assessment

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

Country/Region china
City & Province shanghai shanghai
Categories Measuring & Gauging Tools
InquireNow

Product Details

50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm

2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer

 


Overview
GaN Breakdown Field

A higher breakdown field means that gallium nitride is superior over silicon in high voltage circuits such as high-power products. Manufacturers and engineers can also use GaN in similar voltage applications while maintaining a significantly smaller footprint.

 

2-inch Free-standing U-GaN/SI-GaN Substrates
 

 

Excellent level (S)

 

Production level(A)

Research

level (B)

Dummy

level (C)

 

 

 

 

 

 

Note:

(1) Useable area: edge and macro defects exclusion

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o

S-1S-2A-1A-2
Dimensions50.8 ± 1 mm
Thickness350 ± 25 μm
Orientation flat(1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat(11-20) ± 3o, 8 ± 1 mm
Resistivity (300K)

< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50)

or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50)

TTV≤ 15 μm
BOW≤ 20 μm ≤ 40 μm
Ga face surface roughness

< 0.2 nm (polished)

or < 0.3 nm (polished and surface treatment for epitaxy)

N face surface roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

PackagePackaged in a cleanroom in single wafer container
Useable area> 90%>80%>70%
Dislocation density<9.9x105 cm-2<3x106 cm-2<9.9x105 cm-2<3x106 cm-2<3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

Macro defect density (hole)0 cm-2< 0.3 cm-2< 1 cm-2
Max size of macro defects < 700 μm< 2000 μm< 4000 μm

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Hot Products

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or ...
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF ...
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF ...
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF ...