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doping lithium niobate wafer

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4inch 6inch 300-900 nm Lithium Niobate LiNbO3 LN Thin Films (LNOI) on silicon wafer Direction of application: · Electro-Optic Modulators · Delay Lines · Electro-Optic Q Switches · ...
Shanghai, china
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300-900nm LN-On-Silicon LiNbO3 Lithium Niobate Wafer Thin Films Layer On Silicon Substrate Lithium niobate (LiNbO3) crystal is an important photoelectric material, and is widely ...
Shanghai, china
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2inch 3inch 4inch LNOI LiNbO3 Wafer Lithium Niobate Thin Films Layer On Silicon Substrate LNOI wafer preparation process is shown below, including the following five steps: (1) Ion ...
Shanghai, china
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2inch/3inch/4inch/6inch Y-42°/36°/128° LT Lithium tantalate (LiTaO3) crystal / Fe+ doped type 250um/300um substrate wafer Product Name:Lithium tantalate (LiTaO3) crystal substrateP...
Shanghai, china
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Y-42° LT 4inch Lithium Tantalate LiTaO3 LiNbO3 Lithium Niobate Crystal Raw Unprocessed Ingots Product Description: 1, lithium tantalate is a chemical substance, chemical formula ...
Shanghai, china
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4inch diameter 100mm Lithium niobate LiNbO3 substrate wafer, LN wafer for saw and optical,SAW Grade LiNbO3 Crystal ingot​ Description: Lithium niobate (LiNbO3) is a ferroelectric ...
Shanghai, china
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6 Inch LiTaO3 LiNbO3 Wafer Black Polarized For SAW / BAW Applications 128 Degrees Y Z-Cut Lithium niobate (LiNbO3) single crystal is a ferroelectric crystal with high electromechan...
Shanghai, china
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8inch 4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade 8inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 4H-N type ...
Shanghai, china
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2INCH dia50.8mm Ga doped Ge substrate 4inch N-type 500um Ge wafers Ge wafer for microelectronic application N type, Sb doped Ge wafer N type,undoped Ge wafer P type,Ga doped Ge ...
Shanghai, china
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
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Highly frequency Ti+ doped (Titanium doped)/ Cr+ doped sapphire single crstal used in laser / optical / sapphire laser crystals,ruby glass ball/ ruby sapphire lens Ruby is one of ...
Shanghai, china
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2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor ...
Shanghai, china
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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied ...
Shanghai, china
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Double Side Polish Silicon Carbide Wafer 2-8'' 4H N - Doped SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate​/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N ...
Shanghai, china
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2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, un-doped 4H-SEMI high purity ...
Shanghai, china
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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer About ...
Shanghai, china
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer ...
Shanghai, china
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un...
Shanghai, china
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single un-doped 4" 6" 6inch 4h-semi sic wafer 4Inch ...
Shanghai, china
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