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[China]
Trade Verify
Address: Rm5-616，NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Contact name:Wang
SHANGHAI FAMOUS TRADE CO.,LTD |
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Verified Suppliers
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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs
4 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade | Zero MPD Production Grade (Z Grade) | Production Grade (P Grade) | Dummy Grade (D Grade) | |
Diameter | 99.5-100 mm | |||
Thickness | 4H-N | 350 μm±25μm | ||
4H-SI | 500 μm±25μm | |||
Wafer Orientation | Off axis : 4.0°toward< 1120 > ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI | |||
Micropipe Density | 4H-N | ≤0.5cm-2 | ≤2 cm-2 | ≤15 cm-2 |
4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | |
Resistivity | 4H-N | 0.015~0.025 Ω·cm | 0.015~0.028 Ω·cm | |
4H-SI | ≥1E7 Ω·cm | ≥1E5 Ω·cm | ||
Primary Flat | {10-10}±5.0° | |||
Primary Flat Length | 32.5 mm±2.0 mm | |||
Secondary Flat Length | 18.0mm±2.0 mm | |||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||
Edge exclusion | 2 mm | |||
LTV/TTV/Bow /Warp | ≤4μm/≤10μm /≤25μm /≤35μm | ≤10μm/≤15μm /≤25μm /≤40μm | ||
Roughness | Polish Ra≤1 nm | |||
CMP Ra≤0.5 nm | ||||
Cracks by high intensity light | None | Cumulative length ≤ 10mm, single length≤2mm | ||
Hex Plates by high intensity light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | ||
Polytype Areas by high intensity light | None | Cumulative area ≤3% | ||
Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | ||
Scratches by high intensity light | None | Cumulative length≤1×wafer diameter | ||
Edge chip | None | 5 allowed, ≤1 mm each | ||
Contamination by high intensity light | None | |||
Packaging | Multi-wafer Cassette Or Single Wafer Container | |||
Notes:
* Defects limits apply to entire wafer surface except for the edge
exclusion area. # The scratches should be checked on Si face only.
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.
During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.
Service
We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.
we are at your side by any time when you have problem,and resolve it in 10hours.
