Results forinp semiconductor substrate wafersfrom 1879 Products.
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer ...
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer Indium phosphide (InP) is an important compound semiconductor material with the advantages of high ...
|
|
|
|
|
Product Description: Our InP (Indium Phosphide) semiconductor wafers, renowned for their exceptional electronic and optoelectronic properties, have found extensive applications in ...
|
|
|
|
|
2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor ...
|
|
|
|
|
VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can ...
|
|
|
|
|
4inch diameter 100mm Lithium niobate LiNbO3 substrate wafer, LN wafer for saw and optical,SAW Grade LiNbO3 Crystal ingot Description: Lithium niobate (LiNbO3) is a ferroelectric ...
|
|
|
|
|
2INCH dia50.8mm Ga doped Ge substrate 4inch N-type 500um Ge wafers Ge wafer for microelectronic application N type, Sb doped Ge wafer N type,undoped Ge wafer P type,Ga doped Ge ...
|
|
|
|
|
2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate Single ...
|
|
|
|
|
VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the ...
|
|
|
|
|
SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon ...
|
|
|
|
|
4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer About ...
|
|
|
|
|
2inch N-type single side polished Ge wafers Germanium substrate Ge window for infrared Co2 lasers Diameter:25.4mm Thickness:0.325mm Shanghai Famous Trade Co,.Ltd offers 2”, 3”, 4”, ...
|
|
|
|
|
Al2O3 6 Inch Sapphire Window Substrates Wafer DSP Notch High Precision 8inch/6inch/5inch/ 2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane ...
|
|
|
|
|
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------...
|
|
|
|
|
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------...
|
|
|
|
|
4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in ...
|
|
|
|
|
2inch/3inch/4inch/6inch Y-42°/36°/128° LT Lithium tantalate (LiTaO3) crystal / Fe+ doped type 250um/300um substrate wafer Product Name:Lithium tantalate (LiTaO3) crystal substrateP...
|
|
|
|
|
2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single ...
|
|
|
You may also be interested in :
