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[China]
Trade Verify
Address: Rm5-616，NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Contact name:Wang
SHANGHAI FAMOUS TRADE CO.,LTD |
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Verified Suppliers
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate
size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized |
Ra | Surface roughness(Ra):<=5A |
Polish | Single or doubles side polished |
Package | 100 single or doubles side polished |
It has the advantages of high electronic limit drift speed, good
radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave
devices and integrated circuits.
Wafer Diameter(mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
Thickness(um) | 350±25 | 625±25 | 625±25 |
TTV-P/P(um) | ≤10 | ≤10 | ≤10 |
TTv-P/E(um) | ≤10 | ≤15 | ≤15 |
WARP(um) | ≤15 | ≤15 | ≤15 |
OF(mm) | 17±1 | 22±1 | 32.5±1 |
OF/IF(mm) | 7±1 | 12±1 | 18±11 |
| Description | Application | Wavelength Range |
| InP Based Epi-wafer | FP laser | ~1310nm; ~1550nm;~1900nm |
| DFB laser | 1270nm~1630nm | |
| Avalanche photo-detector | 1250nm~1600nm | |
| Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer) |
| Product Name |
| High Purity Indium Phosphide Polycrystalline Substrate Sheet |
| Iron Doped Indium Phosphide Crystal |
| N-type and P-type Indium Phosphide Crystal |
| 4 Inch Indium Phosphide Single Crystal Ingot |
| Indium Phosphide Based Epitaxial Wafer |
| Indium Phosphide Semiconductor Crystal Substrate |
| Indium Phosphide Single Crystal Substrate |
| Indium Antimonide Single Crystal Substrate |
| Indium Arsenic Single Crystal Substrate |
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock, it is according to quantity.
