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sq4410ey t1 ge3 n channel mosfet

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SI7121DN-T1-GE3 MOSFET 30V 16A 52W 1.8mohm @ 10V Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-1212-8 ...
Guangdong, china
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SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) MOSFET N-CH 60V 60A PPAK SO-8 Surface Mount PowerPAK® SO-8 Specifications of SIR662DP-T1-GE3 TYPE DESCRIPTION ...
Guangdong, china
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SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state ...
china
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Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - ...
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SI4840BDY-T1-GE3 SMD / SMT MOSFET 40V Vds 20V Vgs SO-8 MouseReel FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested Product Category: MOSFET RoHS: Details Technology: Si ...
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SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprin...
Guangdong, china
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Integrated Circuits IC-(Electronic Components ) SIC476ED-T1-GE3 Vishay Intertechnologies Switching Voltage Regulators microBUCK Power Management IC Switching Voltage Regulators ...
HongKong, china
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SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET ...
Guangdong, china
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SIC642ACD-T1-GE3

May,12,2024
Half Bridge Driver General Purpose Power MOSFET PowerPAK® MLP55-31L
Guangdong, china
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Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No Product Category Power MOSFET Configuration Single Quad Drain Triple Source Channel Mode Enhancement Channel ...
china
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SI4848DY-T1-E3 SI4848DY 4848 SOP8 N-Channel MOSFET 150V 2.7A (Ta) 1.5W (Ta) Surface Mount FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V ...
Guangdong, china
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N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4​ Product Description Of IMYH200R012M1H IMYH200R012M1H is N-Channel MOSFETs Silicon Carbide ...
china
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Vishay Discrete RF Power Transistor Trans MOSFET SI7615ADN-T1-GE3 Product Specifications:SI7615ADN.pdf SI7615ADN-T1-GE3 Specifications Part Status Active FET Type P-Channel ...
china
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Product Attribute Attribute Value Select Attribute Manufacturer: Vishay Product Category: MOSFET Brand: Vishay Product Type: MOSFET Subcategory: MOSFETs Here is the English ...
china
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NTMFS4C029NT1G IC Electronic Components N−CHANNEL MOSFET Power Single Product description rated over a −40°C to +105°C temperature Part number NTMFS4C029NT1G is manufactured by ON ...
Guangdong, china
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SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8 PRODUCT DESCRIPTION Part number # SIR422DP-T1-GE3 is manufactured by Vishay Technologies and distributed by ...
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SI4943CDY-T1-GE3 / SOIC-8 / Discrete Semiconductors • Load switching - Computer - Game systems • Battery switching - 2-cell Li-ion Product Attribute Attribute Value Manufacturer: ...
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SI1443EDH-T1-GE3 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A ...
china
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SIHJ6N65E-T1-GE3

Apr,11,2024
The SIHJ6N65E-T1-GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more ...
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