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N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4

ShenZhen Mingjiada Electronics Co.,Ltd.

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N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4

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Product Details

N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4​

 

Product Description Of IMYH200R012M1H

IMYH200R012M1H is N-Channel MOSFETs Silicon Carbide Junction Transistor, Through Hole, package is TO-247-4.

 

Specification Of IMYH200R012M1H

Part NumberIMYH200R012M1H
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 60A, 18V

 

Features Of​ IMYH200R012M1H

  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 60A, 18V
  • Vgs(th) (Max) @ Id: 5.5V @ 48mA
  • Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 18 V

 

Other Electronic Components In Stock​

Part NumberPackage
BQ24250CYFFRDSBGA30
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TPS51220ARSNRQFN32
CM3202-00DEQFN
5AGZME1E3H29C4NBGA
PSS30S92E6-AGModule


FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

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