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SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET

Anterwell Technology Ltd.
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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

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Anterwell Technology Ltd.

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET

Country/Region china
City & Province shenzhen guangdong
Categories Oxide
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Product Details


SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET


FEATURES

• Halogen-free Option Available

• TrenchFET® Power MOSFET

 

APPLICATIONS

• Load Switch

 

MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)Qg (Typ.)
- 200.112 at VGS = - 4.5 V- 3.13.3 nC
0.142 at VGS = - 2.5 V- 2.7

 

 

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

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