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inas wafer indium arsenide

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Results forinas wafer indium arsenidefrom 182 Products.
3inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer (A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
Shanghai, china
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P Type , InAs Substrate with (100),(111) Orientation , 3”, Dummy Grade PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic ...
Fujian, china
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2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
Shanghai, china
Verified
4inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer (A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
Shanghai, china
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4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer​2inch 3inch 4inch InP substrates for LD application, ...
Shanghai, china
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4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer​2inch 3inch 4inch InP substrates for LD application, ...
Shanghai, china
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VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------...
Shanghai, china
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2inch GaAs Substrates Single Crystal Gallium Arsenide Substrates Semi-Conducting N Type --------------------------------------------------------------------------------------------...
Shanghai, china
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2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD Indium phosphide single crystal material is one of most important ...
Shanghai, china
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3’’ Undopped InSb Wafers IR Detector Photodiode Thermal Image Sensor 85 GHz Description: 1. Indium antimonide is a direct band gap semiconductor material that belongs to the ...
Shanghai, china
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2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal The tCZ growth (modified Czochralski method...
Shanghai, china
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2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor ...
Shanghai, china
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Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, ...
Shanghai, china
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Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, ...
Shanghai, china
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4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, ...
Shanghai, china
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4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, ...
Shanghai, china
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide is used in the manufacture of light-emitting diode s (LEDs), which are found in optical communications and control ...
Shanghai, china
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4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, ...
Shanghai, china
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Undoped InAs Semiconductor Wafer , 3”, Prime Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient ...
Fujian, china
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Hot Selling Price Per Kg Liquid Metal Galinstan Indium Tin Alloy indium bar ingot Galinstan Alloy Purity 3N, 4N, 5N; Ga:In:Sn=68.5:21.5:10 by wt, or as required Appearance Silver ...
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