Results forinas wafer indium arsenidefrom 182 Products.
|
|
2Inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED Application -----------------------------------------------------------------------------------...
|
|
|
|
|
2'' 4'' InP Wafer Indium Phosphide Wafer Semiconductor Substrates 350um 650um Description of InP wafer: InP (Indium phosphide) chips are a commonly used semiconductor material for ...
|
|
|
|
|
32inch InAs wafers N-type un-doped type GaAs wafers GaSb Wafers Application InAs single crystal can be used as substrate material to grow InAsSb/InAsPSb, InNAsSb and other ...
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, ---------------------------------------------------------------...
|
|
|
|
|
VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, ---------------------------------------------------------------...
|
|
|
|
|
2inch dia50.8mm n-type dummy prime grade InP indium Phosphide Wafer 4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single ...
|
|
|
|
|
Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' Thickness 350um Description of Indium Phosphide: Indium Phosphide (InP) chips are a widely used material in ...
|
|
|
|
|
3inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer (A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
|
|
|
|
|
2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
|
|
|
|
|
4inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer (A compound of the elements gallium and arsenic. It is a III-V direct bandgap ...
|
|
|
|
|
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, ...
|
|
|
|
|
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, ...
|
|
|
|
|
2inch GaAs Substrates Single Crystal Gallium Arsenide Substrates Semi-Conducting N Type --------------------------------------------------------------------------------------------...
|
|
|
|
|
2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD Indium phosphide single crystal material is one of most important ...
|
|
|
|
|
3’’ Undopped InSb Wafers IR Detector Photodiode Thermal Image Sensor 85 GHz Description: 1. Indium antimonide is a direct band gap semiconductor material that belongs to the ...
|
|
|
|
|
2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal The tCZ growth (modified Czochralski method...
|
|
|
|
|
Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, ...
|
|
|
|
|
Germanium Single Crystals Wafers,Ge optical plates Germanium substrates Application: germanium wafer used in production of semiconductor device, infrared ray optical device, ...
|
|
|
You may also be interested in :
