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Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD

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Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD

Country/Region	china
City & Province	shanghai shanghai
Categories	Other Metals & Metal Products

Product Details

2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD

Indium phosphide single crystal material is one of most important semiconductor compound, which is key raw material for laser diode of indium phosphide substrate(LD), light emitting diode(LED), photodetector in optical communication production. Those parts play information launching, transmitting, amplifying, reception function .

Indium phosphide is ideal for high-frequency devices, as HEMT, HBT and so on.Because of its great property, it is widely used in fibre-optical communication, microwave, millietric wave, anti-radiation of solar cells, heterojunction transistor, other similar advanced technology and so on. Main production methods of indium phosphide single cryatal material include LEC, improved LEC, VCZ/PC-LEC, VGF, VB and so on.

Specification

Item	Diameter	Type	carrying concentration	Mobility	Resistivity	MPD
S-InP	2	N	(0.8-6)X10^18	(1.5-3.5)x10^3		＜500
	3					＜500
	4					＜1x10^3
Fe-InP	2/3/4	SI		＞1000	＞0.5x10^7	＞5x10^3
Zn-InP	2/3/4	P	(0.6-6)X10^18	50-70		＜1x10^3
No dope InP	2	N	＜3x10^16	(3.5-4)x10^3		＜5x10^3
	Other
Orientation		(100)/(111)±0.5°		Flatness
				TTV	Bow	Warp
				＜12um	＜12um	≤15um
1st OF Flat		16±2mm		22±2mm	32.5±2.5mm
2st OF Flat		8±1mm		11±2mm	32.5±2.5mm
Surface:1sp or 2sp ,2inch 350±25um,3inch 600±25um,4inch 625±25um,or by customized

Most of our production is made up of premium grade wafers. However, in every boule, some test grade wafers are available. Test wafers have the same electrical performance and geometrical specification than premium wafers but with a small local damage :
- a surface defect like a scratch or a pit or a stain on the front side,
- a crystalline imperfection like high EPD or a twin lamellae. The latter is made up of 2 parallel lines in the <110> direction. Between these 2 lines, the orientation is not (100) contrary to the whole wafer ; the distance between the 2 lines is very small (< 1mm).
Over 95 % of the whole surface is premium quality which makes them useful for calibration runs. The type of defect is indicated on a label for each wafer.

sample